? semiconductor components industries, llc, 2004 april, 2004 ? rev. 1 1 publication order number: NTMSD2P102LR2/d NTMSD2P102LR2 fetky ? power mosfet and schottky diode dual so?8 package features ? high efficiency components in a single so?8 package ? high density power mosfet with low r ds(on) , schottky diode with low v f ? logic level gate drive ? independent pin?outs for mosfet and schottky die allowing for flexibility in application use ? less component placement for board space savings ? so?8 surface mount package, mounting information for so?8 package provided applications ? power management in portable and battery?powered products, i.e.: computers, printers, pcmcia cards, cellular and cordless telephones mosfet maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit drain?to?source voltage v dss ?20 v gate?to?source voltage ? continuous v gs 10 v thermal resistance ? junction?to?ambient (note 1) total power dissipation @ t a = 25 c continuous drain current @ t a = 25 c continuous drain current @ t a = 100 c pulsed drain current (note 4) r q ja p d i d i d i dm 175 0.71 ?2.3 ?1.45 ?9.0 c/w w a a a thermal resistance ? junction?to?ambient (note 2) total power dissipation @ t a = 25 c continuous drain current @ t a = 25 c continuous drain current @ t a = 100 c pulsed drain current (note 4) r q ja p d i d i d i dm 105 1.19 ?2.97 ?1.88 ?12 c/w w a a a thermal resistance ? junction?to?ambient (note 3) total power dissipation @ t a = 25 c continuous drain current @ t a = 25 c continuous drain current @ t a = 100 c pulsed drain current (note 4) r q ja p d i d i d i dm 62.5 2.0 ?3.85 ?2.43 ?15 c/w w a a a operating and storage temperature range t j , t stg ?55 to +150 c single pulse drain?to?source avalanche energy ? starting t j = 25 c (v dd = ?20 vdc, v gs = ?4.5 vdc, peak i l = ?5.0 apk, l = 28 mh, r g = 25 w ) e as 350 mj maximum lead temperature for soldering purposes, 1/8 from case for 10 seconds t l 260 c 1. minimum fr?4 or g?10 pcb, steady state. 2. mounted onto a 2 square fr?4 board (1 sq. 2 oz cu 0.06 thick single sided), steady state. 3. mounted onto a 2 square fr?4 board (1 sq. 2 oz cu 0.06 thick single sided), t 10 seconds. 4. pulse test: pulse width = 300 s, duty cycle = 2%. device package shipping 2 ordering information NTMSD2P102LR2 so?8 2500/tape & reel so?8 case 751 style 18 2 anode anode source gate 3 4 1 7 6 5 8 cathode cathode drain drain (top view) marking diagram & pin assignments e2p102 lyww e2p102 = device code l = assembly location y = year ww = work week 1 2 3 4 8 7 6 5 a a s g c c d d top view mosfet ?2.3 amperes ?20 volts 90 m @ v gs = ?4.5 v schottky diode 2.0 amperes 20 volts 580 mv @ i f = 2.0 a http://onsemi.com 2for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. 1 8
NTMSD2P102LR2 http://onsemi.com 2 schottky maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit peak repetitive reverse voltage dc blocking voltage v rrm v r 20 v average forward current (note 5) (rated v r , t a = 100 c) i o 1.0 a peak repetitive forward current (note 5) (rated v r , square wave, 20 khz, t a = 105 c) i frm 2.0 a non?repetitive peak surge current (note 5) (surge applied at rated load conditions, half?wave, single phase, 60 hz) i fsm 20 a electrical characteristics (t j = 25 c unless otherwise noted) (note 6) characteristic symbol min typ max unit off characteristics drain?to?source breakdown voltage (v gs = 0 vdc, i d = ?250 adc) temperature coefficient (positive) v (br)dss ?20 ? ? ?12.7 ? ? vdc mv/ c zero gate voltage drain current (v ds = ?16 vdc, v gs = 0 vdc, t j = 25 c) (v ds = ?16 vdc, v gs = 0 vdc, t j = 125 c) i dss ? ? ? ? ?1.0 ?25 adc zero gate voltage drain current (v gs = 0 vdc, v ds = ?20 vdc, t j = 25 c) i dss ? ? ?2.0 adc gate?body leakage current (v gs = ?10 vdc, v ds = 0 vdc) i gss ? ? ?100 nadc gate?body leakage current (v gs = +10 vdc, v ds = 0 vdc) i gss ? ? 100 nadc on characteristics gate threshold voltage (v ds = v gs , i d = ?250 adc) temperature coefficient (negative) v gs(th) ?0.5 ? ?0.90 2.5 ?1.5 ? vdc mv/ c static drain?to?source on?state resistance (v gs = ?4.5 vdc, i d = ?2.4 adc) (v gs = ?2.7 vdc, i d = ?1.2 adc) (v gs = ?2.5 vdc, i d = ?1.2 adc) r ds(on) ? ? ? 0.070 0.100 0.110 0.090 0.130 0.150 w forward transconductance (v ds = ?10 vdc, i d = ?1.2 adc) g fs ? 4.2 ? mhos dynamic characteristics input capacitance (v 16 vd v 0vd c iss ? 550 750 pf output capacitance (v ds = ?16 vdc, v gs = 0 vdc, f = 1.0 mhz ) c oss ? 200 300 reverse transfer capacitance f = 1 . 0 mhz) c rss ? 100 175 5. mounted onto a 2 square fr?4 board (1 sq. 2 oz cu 0.06 thick single sided), t 10 seconds. 6. handling precautions to protect against electrostatic discharge is mandatory.
NTMSD2P102LR2 http://onsemi.com 3 electrical characteristics (t j = 25 c unless otherwise noted) (continued) (note 7) characteristic symbol min typ max unit switching characteristics (notes 8 & 9) turn?on delay time t d(on) ? 10 20 ns rise time (v dd = ?10 vdc, i d = ?2.4 adc, v gs = 4 5 vdc t r ? 35 65 turn?off delay time v gs = ?4.5 vdc, r g = 6.0 w ) t d(off) ? 33 60 fall time r g 6.0 w ) t f ? 29 55 turn?on delay time t d(on) ? 15 ? ns rise time (v dd = ?10 vdc, i d = ?1.2 adc, v gs = 2 7 vdc t r ? 40 ? turn?off delay time v gs = ?2.7 vdc, r g = 6.0 w ) t d(off) ? 35 ? fall time r g 6.0 w ) t f ? 35 ? total gate charge (v ds =? 16 vdc, q tot ? 10 18 nc gate?source charge (v ds = ? 16 vdc , v gs = ?4.5 vdc, i 24ad ) q gs ? 1.5 ? gate?drain charge gs i d = ?2.4 adc) q gd ? 5.0 ? body?drain diode ratings (note 8) diode forward on?voltage (i s = ?2.4 adc, v gs = 0 vdc) (i s = ?2.4 adc, v gs = 0 vdc, t j = 125 c) v sd ? ? ?0.88 ?0.75 ?1.0 ? vdc reverse recovery time (i 24ad v 0vd t rr ? 37 ? ns (i s = ?2.4 adc, v gs = 0 vdc, di s /dt = 100 a/ m s ) t a - 16 - di s /dt = 100 a/ m s) t b ? 21 ? reverse recovery stored charge q rr ? 0.025 ? m c schottky rectifier electrical characteristics (t j = 25 c unless otherwise noted) (note 8) maximum instantaneous forward voltage i 10ad v f t j = 25 c t j = 125 c volts g i f = 1.0 adc i f = 2.0 adc 0.47 0.58 0.39 0.53 maximum instantaneous reverse current v 20 vd i r t j = 25 c t j = 125 c ma v r = 20 vdc 0.05 10 maximum voltage rate of change v r = 20 vdc dv/dt 10,000 v/ s 7. handling precautions to protect against electrostatic discharge is mandatory. 8. indicates pulse test: pulse width = 300 m s max, duty cycle = 2%. 9. switching characteristics are independent of operating junction temperature.
NTMSD2P102LR2 http://onsemi.com 4 v gs = ?1.5 v v gs = ?1.7 v v gs = ?1.9 v t j = 55 c t j = 25 c v gs = ?10 v v gs = ?4.5 v v gs = ?2.5 v figure 1. on?region characteristics. figure 2. transfer characteristics. figure 3. on?resistance vs. gate?to?source voltage. figure 4. on?resistance vs. drain current and gate voltage. figure 5. on?resistance variation with temperature. figure 6. drain?to?source leakage current vs. voltage. v gs = ?2.1 v t j = 25 c t j = 100 c t j = 25 c t j = 25 c v gs = ?2.7 v v gs = ?4.5 v i d = ?2.4 a v gs = ?4.5 v v gs = 0 v t j = 125 c t j = 25 c t j = 100 c v ds > = ?10 v 150 ?50 1.6 1.4 ?25 0 25 75 1.2 1 0.8 0.6 20 0 1000 100 4 8 12 16 10 1 0.1 0.01 ?v ds, drain?to?source voltage (volts) 125 100 50 t j, junction temperature ( c) 1 0.12 0.1 1.5 2 2.5 3.5 0.08 0.06 0.04 4.5 4 3 2 0.2 0.15 46 0.1 0.05 0 8 1 5 4 1.5 2 3 2 0 3 0 4 3 6 2 1 0 8 1 2.5 4 210 ?i d, drain current (amps) ?v ds , drain?to?source voltage (volts) ?v gs , gate?to?source voltage (volts) ?v gs, gate?to?source voltage (volts) ?i d, drain current (amps) ?i d, drain current (amps) ?i dss, leakage (na) r ds(on) , drain?to?source resistance ( ) r ds(on) , drain?to?source resistance (normalized) r ds(on) , drain?to?source resistance ( )
NTMSD2P102LR2 http://onsemi.com 5 t r t, time (ns) gate?to?source or drain?to?source voltage (volts) t d (off) t d (off) figure 7. capacitance variation figure 8. gate?to?source and drain?to?source voltage versus total charge figure 9. resistive switching time variation versus gate resistance figure 10. resistive switching time variation versus gate resistance figure 11. diode forward voltage versus current figure 12. diode reverse recovery waveform v ds = 0 v v gs = 0 v t j = 25 c c iss c rss c oss c iss c rss v dd = ?10 v i d = ?1.2 a v gs = ?2.7 v t f t d (on) t r t f v gs = 0 v t j = 25 c di/dt t rr t a t p i s 0.25 i s time i s t b 1 0 0.9 0.8 0.7 0.6 0.5 0.4 0.4 0.8 1.2 1.6 2 ?v sd, source?to?drain voltage (volts) 1.0 100 10 1.0 10 100 10 100 10 1.0 100 1000 r g, gate resistance (ohms) 20 10 1500 1200 5051015 900 600 300 0 r g, gate resistance (ohms) t, time (ns) ?i s, source current (amps) v dd = ?10 v i d = ?2.4 a v gs = ?4.5 v t d (on) c, capacitance (pf) ?v ds ?v gs ?v gs, gate?to?source voltage (volts) qt q2 q1 v gs i d = ?2.4 a t j = 25 c v ds 0 8 0 3 5 1 2 4 246 10 14 q g , total gate charge (nc) 20 18 16 14 12 10 8 6 4 2 0 ?v ds, drain?to?source voltage (volts) 12
NTMSD2P102LR2 http://onsemi.com 6 0.1 figure 13. fet thermal response normalized to r ? ja at steady state (1 inch pad) 0.0125 w 0.0563 w 0.110 w 0.273 w 0.113 w 0.436 w 0.021 f 0.137 f 1.15 f 2.93 f 152 f 261 f 0.01 0.02 0.05 0.2 single pulse d = 0.5 r thja(t), effective transient thermal response t, time (s) 1e?03 1e?02 1e?01 1e+00 1e+03 1e+02 1e+03 1 0.1 0.01 typical schottky electrical characteristics t j = 125 c figure 14. typical forward voltage figure 15. maximum forward voltage 0.7 1.0 0.1 v f , instantaneous forward voltage (volts) 10 1.0 v f , maximum instantaneous forward voltage (volts) 1.4 0 1.0 0.1 0.1 0.4 0.2 0.3 0.5 0.6 0.8 0.9 0.2 0.4 0.6 0.8 10 1.0 1.2 85 c 25 c ?40 c t j = 125 c 25 c 85 c i f , instantaneous forward current (amps) i f , instantaneous forward current (amps)
NTMSD2P102LR2 http://onsemi.com 7 typical schottky electrical characteristics figure 16. typical reverse current figure 17. maximum reverse current figure 18. typical capacitance figure 19. current derating figure 20. forward power dissipation 15 20 0 v r , reverse voltage (volts) 1e?2 1e?4 1e?3 1e?5 15 20 0 v r , reverse voltage (volts) 1000 100 10 t a , ambient temperature ( c) 20 0 1.6 0.8 0.6 0.4 0.2 0 40 0 i o , average forward current (amps) 0.5 0.4 0.3 0.2 0.1 0 0.5 i r , reverse current (amps) 1e?6 1e?7 5.0 10 5.0 10 60 80 100 120 140 160 , average power dissipation (watts) p fo 1.0 1.5 c, capacitance (pf) i , average forward current (amps) o 2.0 0.6 0.7 15 20 0 v r , reverse voltage (volts) 1e?1 1e?3 1e?2 1e?4 i r , maximum reverse current (amps) 1e?5 1e?6 5.0 10 1.0 1.2 1.4 square wave dc i pk /i o = 5.0 i pk /i o = i pk /i o = 10 i pk /i o = 20 typical capacitance at 0 v = 170 pf t j = 125 c 25 c t j = 125 c 25 c 85 c freq = 20 khz dc square wave i pk /i o = 5.0 i pk /i o = i pk /i o = 10 i pk /i o = 20
NTMSD2P102LR2 http://onsemi.com 8 typical schottky electrical characteristics figure 21. schottky thermal response t, time (s) rthja(t), effective transient thermal resistance 1.0 0.1 d = 0.5 single pulse 1.0e?05 1.0e?04 1.0e?03 1.0e?02 1.0e?01 1.0e+00 1.0e+01 0.2 0.1 0.05 0.02 0.01 1.0e+02 1.0e+03 0.001 0.01 normalized to r ja at steady state (1 pad) chip junction 0.0031 0.0014 f 0.0154 0.0082 f 0.1521 0.1052 f 0.4575 2.7041 f 0.3719 158.64 f ambient
NTMSD2P102LR2 http://onsemi.com 9 package dimensions so?8 case 751?07 issue ab *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* seating plane 1 4 5 8 n j x 45 k notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. dimension a and b do not include mold protrusion. 4. maximum mold protrusion 0.15 (0.006) per side. 5. dimension d does not include dambar protrusion. allowable dambar protrusion shall be 0.127 (0.005) total in excess of the d dimension at maximum material condition. 6. 751-01 thru 751-06 are obsolete. new standard is 751-07. a b s d h c 0.10 (0.004) dim a min max min max inches 4.80 5.00 0.189 0.197 millimeters b 3.80 4.00 0.150 0.157 c 1.35 1.75 0.053 0.069 d 0.33 0.51 0.013 0.020 g 1.27 bsc 0.050 bsc h 0.10 0.25 0.004 0.010 j 0.19 0.25 0.007 0.010 k 0.40 1.27 0.016 0.050 m 0 8 0 8 n 0.25 0.50 0.010 0.020 s 5.80 6.20 0.228 0.244 ?x? ?y? g m y m 0.25 (0.010) ?z? y m 0.25 (0.010) z s x s m 1.52 0.060 7.0 0.275 0.6 0.024 1.270 0.050 4.0 0.155 scale 6:1 mm inches style 18: pin 1. anode 2. anode 3. source 4. gate 5. drain 6. drain 7. cathode 8. cathode
NTMSD2P102LR2 http://onsemi.com 10 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 ntmsd2p102r2/d fetky is a trademark of international rectifier corporation. literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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